PART |
Description |
Maker |
2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2 |
NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB (2N6130 - 2N6134) NPN SILICON TRANSISTOR Leaded Power Transistor General Purpose Leaded Power Transistor Darlington
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http:// ON Semiconductor Central Semiconductor Corp. Advanced Semiconductor CENTRAL[Central Semiconductor Corp] Central Semiconductor C...
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2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 From old datasheet system (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR NPN Transistor
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
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Motorola, Inc. ONSEMI[ON Semiconductor]
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MJE371 ON2036 |
POWER TRANSISTOR PNP SILICON 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS From old datasheet system
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Motorola Inc ONSEMI[ON Semiconductor] MOTOROLA[Motorola Inc] http://
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2SA1742 2SA1742K 2SA1742-K |
7 A, 60 V, PNP, Si, POWER TRANSISTOR Silicon powor transistor PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
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NEC[NEC]
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STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
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AUK, Corp. AUK[AUK corp]
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2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 5A条一(c)| TO - 220AB现有 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING Silicon power transistor
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NEC, Corp. NEC Corp.
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2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
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NEC Corp. NEC, Corp.
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2SD2164 |
Silicon power transistor NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
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NEC
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2SA1840 |
Silicon power transistor PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
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NEC
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2SA1845 |
Silicon power transistor PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
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NEC
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